Multiscale modeling of charge trapping in molecule based flash memories

Oves Badami*, Toufik Sadi, Vihar Georgiev, Fikru Adamu-Lema, Vasanthan Thirunavukkarasu, Jie Ding, Asen Asenov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)
32 Downloads (Pure)

Abstract

To keep up with the increase in demand for storing data, flash memories have been scaled down dramatically and stacked by the semiconductor industry. Furthermore, processing large data has highlighted the limitations of the von Neumann architecture. To overcome this, different types of memory devices like Resistive Random-Access Memories (RRAMs) have also gained a lot of importance. Hence, carrier dynamics in oxides has gained significant traction in recent years. In this work, we discuss the kinetic Monte Carlo methodology as implemented in our integrated simulation environment NESS (Nano-Electronic Simulation Software) that allows us to study carrier transport in the oxide using accurate physics based models. As an example, we study the retention characteristics in a molecule based flash memory.

Original languageEnglish
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
PublisherIEEE
ISBN (Electronic)9781728109404
DOIs
Publication statusPublished - 1 Sep 2019
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Udine, Italy
Duration: 4 Sep 20196 Sep 2019
Conference number: 24

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
Abbreviated titleSISPAD
CountryItaly
CityUdine
Period04/09/201906/09/2019

Keywords

  • Kinetic Monte Carlo
  • POM molecule
  • Trap Assisted Tunneling

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