MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

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MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC. / Lemettinen, J.; Okumura, H.; Kim, I.; Rudzinski, M.; Grzonka, J.; Palacios, T.; Suihkonen, S.

In: Journal of Crystal Growth, Vol. 487, 01.04.2018, p. 50-56.

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Lemettinen, J. ; Okumura, H. ; Kim, I. ; Rudzinski, M. ; Grzonka, J. ; Palacios, T. ; Suihkonen, S. / MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC. In: Journal of Crystal Growth. 2018 ; Vol. 487. pp. 50-56.

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@article{fdb5ba8172124936af47383a1e1beeb5,
title = "MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC",
abstract = "We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.",
keywords = "A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds",
author = "J. Lemettinen and H. Okumura and I. Kim and M. Rudzinski and J. Grzonka and T. Palacios and S. Suihkonen",
year = "2018",
month = "4",
day = "1",
doi = "10.1016/j.jcrysgro.2018.02.020",
language = "English",
volume = "487",
pages = "50--56",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

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TY - JOUR

T1 - MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

AU - Lemettinen, J.

AU - Okumura, H.

AU - Kim, I.

AU - Rudzinski, M.

AU - Grzonka, J.

AU - Palacios, T.

AU - Suihkonen, S.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

AB - We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

KW - A1. Polarity

KW - A1. X-ray diffraction

KW - A3. Metal-organic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting aluminum compounds

UR - http://www.scopus.com/inward/record.url?scp=85042313183&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2018.02.020

DO - 10.1016/j.jcrysgro.2018.02.020

M3 - Article

VL - 487

SP - 50

EP - 56

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 18124280