MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • University of Tsukuba
  • Massachusetts Institute of Technology
  • Institute of Electronic Materials Technology


We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.


Original languageEnglish
Pages (from-to)50-56
Number of pages7
JournalJournal of Crystal Growth
Publication statusPublished - 1 Apr 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds

ID: 18124280