MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

J. Lemettinen*, H. Okumura, I. Kim, M. Rudzinski, J. Grzonka, T. Palacios, S. Suihkonen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)
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Abstract

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

Original languageEnglish
Pages (from-to)50-56
Number of pages7
JournalJournal of Crystal Growth
Volume487
DOIs
Publication statusPublished - 1 Apr 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • A1. Polarity
  • A1. X-ray diffraction
  • A3. Metal-organic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting aluminum compounds

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  • Projects

    DeFaMe: Defect related failure mechanisms in III-N devices (DeFaMe)

    Suihkonen, S.

    01/09/201631/08/2021

    Project: Academy of Finland: Other research funding

    Equipment

    OtaNano

    Anna Rissanen (Manager)

    Aalto University

    Facility/equipment: Facility

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