MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

J. Lemettinen^*, H. Okumura, I. Kim, C. Kauppinen, T. Palacios, S. Suihkonen

^*Corresponding author for this work

Department of Electronics and Nanoengineering

Research output: Contribution to journal › Article › Scientific › peer-review

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Finished
DeFaMe: Defect related failure mechanisms in III-N devices
Suihkonen, S. (Principal investigator)
01/09/2016 → 31/08/2021
Project: Academy of Finland: Other research funding