MOVPE growth of GaN on patterned 6-inch Si wafer

Iurii Kim, Joonas Holmi, Ramesh Raju, Atte Haapalinna, Sami Suihkonen

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
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We demonstrate that thicker layers can be achieved in gallium nitride (GaN) epitaxy by using a patterned silicon (Si) substrate compared to a planar Si substrate. GaN films were grown by metalorganic vapour-phase epitaxy on 6-inch Si (111) substrates patterned with arrays of squares with various corner shapes, height and lateral dimensions. Stress spatial distributions in the GaN pattern units were mapped out using confocal Raman spectroscopy. It was found that the corner shapes have an effect on the uniformity of the stress distribution. Patterns with round corners were found to have more uniform stress distribution than those with sharp corners. The largest crack-free square size for a 1.5 μm thick GaN film is 500 × 500 μm2.
Original languageEnglish
Article number045010
Pages (from-to)1-10
Number of pages10
JournalJournal of Physics Communications
Issue number4
Publication statusPublished - 20 Apr 2020
MoE publication typeA1 Journal article-refereed


  • GaN
  • gallium nitride
  • Raman analysis
  • stress distribution
  • patterned silicon


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