MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

Research output: Working paperProfessional

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Details

Original languageEnglish
Place of PublicationEspoo
Pages25-26
Publication statusPublished - 1994
MoE publication typeD4 Published development or research report or study

Publication series

NameOptoelectronics Laboratory, Annual Report 1993
PublisherTKK
No.TKK-F-C160

    Research areas

  • movpe, GaInAsSb, metalorganic vapour phase epitaxy

ID: 5170175