MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

M. Sopanen; T. Koljonen; H. Lipsanen

MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	25-26
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Publication series

Name	Optoelectronics Laboratory, Annual Report 1993
Publisher	TKK
No.	TKK-F-C160

Keywords

movpe, GaInAsSb, metalorganic vapour phase epitaxy

Cite this

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title = "MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source",

keywords = "movpe, GaInAsSb, metalorganic vapour phase epitaxy, movpe, GaInAsSb, metalorganic vapour phase epitaxy, movpe, GaInAsSb, metalorganic vapour phase epitaxy",

author = "M. Sopanen and T. Koljonen and H. Lipsanen",

year = "1994",

language = "English",

series = "Optoelectronics Laboratory, Annual Report 1993",

publisher = "TKK",

number = "TKK-F-C160",

pages = "25--26",

type = "WorkingPaper",

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T1 - MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

AU - Sopanen, M.

AU - Koljonen, T.

AU - Lipsanen, H.

PY - 1994

Y1 - 1994

KW - movpe, GaInAsSb, metalorganic vapour phase epitaxy

M3 - Working paper

T3 - Optoelectronics Laboratory, Annual Report 1993

SP - 25

EP - 26

BT - MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

CY - Espoo

ER -