MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources

M. Sopanen, H. Lipsanen, T. Koljonen, J. Ahopelto, M. Taskinen

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	22-24
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Name	Optoelectronics Laboratory, Annual Report 1993
Publisher	TKK
No.	TKK-F-C160

Keywords

@techreport{4cbf545b209b4bd383a2e212e651ad8b,

title = "MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources",

keywords = "movpe, GaAs, AlGaAs, InP, InGaAs, InGaAsP, movpe, GaAs, AlGaAs, InP, InGaAs, InGaAsP, movpe, GaAs, AlGaAs, InP, InGaAs, InGaAsP",

author = "M. Sopanen and H. Lipsanen and T. Koljonen and J. Ahopelto and M. Taskinen",

year = "1994",

language = "English",

series = "Optoelectronics Laboratory, Annual Report 1993",

publisher = "TKK",

number = "TKK-F-C160",

pages = "22--24",

type = "WorkingPaper",

institution = "TKK",

}

TY - UNPB

T1 - MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Koljonen, T.

AU - Ahopelto, J.

AU - Taskinen, M.

PY - 1994

Y1 - 1994

KW - movpe, GaAs, AlGaAs, InP, InGaAs, InGaAsP

M3 - Working paper

T3 - Optoelectronics Laboratory, Annual Report 1993

SP - 22

EP - 24

BT - MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources

CY - Espoo

ER -