MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Sami Suihkonen*, Olli Svensk, Pekka Törmä, Muhammad Ali, Markku Sopanen, Harri Lipsanen, M.A. Odnoblyudo, Vladislav Bougrov

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples. © 2007 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)1777-1780
    Number of pages4
    JournalJournal of Crystal Growth
    Volume310
    Issue number7-9
    DOIs
    Publication statusPublished - Apr 2008
    MoE publication typeA1 Journal article-refereed

    Keywords

    • A3. Metalorganic vapor phase epitaxy
    • A3. Quantum wells
    • B1. InAlGaN

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