MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Sami Suihkonen; Olli Svensk; Pekka Törmä; Muhammad Ali; Markku Sopanen; Harri Lipsanen; M.A. Odnoblyudo; Vladislav Bougrov

doi:10.1016/j.jcrysgro.2007.11.122

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Sami Suihkonen^*, Olli Svensk, Pekka Törmä, Muhammad Ali, Markku Sopanen, Harri Lipsanen, M.A. Odnoblyudo, Vladislav Bougrov

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1777-1780
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	7-9
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.122
Publication status	Published - Apr 2008
MoE publication type	A1 Journal article-refereed

Keywords

A3. Metalorganic vapor phase epitaxy
A3. Quantum wells
B1. InAlGaN

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title = "MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures",

abstract = "We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "A3. Metalorganic vapor phase epitaxy, A3. Quantum wells, B1. InAlGaN",

author = "Sami Suihkonen and Olli Svensk and Pekka T{\"o}rm{\"a} and Muhammad Ali and Markku Sopanen and Harri Lipsanen and M.A. Odnoblyudo and Vladislav Bougrov",

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T1 - MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

AU - Suihkonen, Sami

AU - Svensk, Olli

AU - Törmä, Pekka

AU - Ali, Muhammad

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Odnoblyudo, M.A.

AU - Bougrov, Vladislav

PY - 2008/4

Y1 - 2008/4

N2 - We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples. © 2007 Elsevier B.V. All rights reserved.

AB - We report on the growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures by metalorganic vapor phase epitaxy (MOVPE). The composition of the grown films was evaluated by high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. It was found that increasing the In precursor flow not only increased the In content of the InAlGaN films but also decreased the Al content. Uniform compositional depth profile was achieved when the In content of the films was below 0.02. At higher In contents the InAlGaN/GaN interface became diffused. In the InGaN/InAlGaN MQW samples increasing the In content of the barrier layers to 0.016 was found to cause non-uniform distribution of Al and degrade the optical quality of the samples. © 2007 Elsevier B.V. All rights reserved.

KW - A3. Metalorganic vapor phase epitaxy

KW - A3. Quantum wells

KW - B1. InAlGaN

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U2 - 10.1016/j.jcrysgro.2007.11.122

DO - 10.1016/j.jcrysgro.2007.11.122

M3 - Article

VL - 310

SP - 1777

EP - 1780

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 7-9

ER -

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

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Keywords

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