Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Ashley E. Morishige; Friedemann D. Heinz; Hannu S. Laine; Jonas Schon; Wolfram Kwapil; Barry Lai; Hele Savin; Martin C. Schubert; Tonio Buonassisi

doi:10.1109/JPHOTOV.2018.2869544

Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Ashley E. Morishige
, Friedemann D. Heinz
, Hannu S. Laine
, Jonas Schon
, Wolfram Kwapil
, Barry Lai
, Hele Savin
, Martin C. Schubert
, Tonio Buonassisi

Massachusetts Institute of Technology
Albert-Ludwigs-Universität Freiburg
Argonne National Laboratory
Fraunhofer Institute for Solar Energy Systems

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.

Original language	English
Pages (from-to)	1525 - 1530
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2018.2869544
Publication status	Published - 2018
MoE publication type	A1 Journal article-refereed

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Charge carrier lifetime
Correlative microscopy
Iron
micro-photolumine-scence (μ-PL)
micro-X-ray fluorescence (μ-XRF)
n-type
Photovoltaic cells
Photovoltaic systems
precipitate
Silicon
silicon
synchrotron

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10.1109/JPHOTOV.2018.2869544

Cite this

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title = "Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon",

abstract = "N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.",

keywords = "Charge carrier lifetime, Correlative microscopy, Iron, micro-photolumine-scence (\&\#x03BC;-PL), micro-X-ray fluorescence (\&\#x03BC;-XRF), n-type, Photovoltaic cells, Photovoltaic systems, precipitate, Silicon, silicon, synchrotron",

author = "Morishige, \{Ashley E.\} and Heinz, \{Friedemann D.\} and Laine, \{Hannu S.\} and Jonas Schon and Wolfram Kwapil and Barry Lai and Hele Savin and Schubert, \{Martin C.\} and Tonio Buonassisi",

note = "| openaire: EC/FP7/307315/EU//SOLARX",

year = "2018",

doi = "10.1109/JPHOTOV.2018.2869544",

language = "English",

volume = "8",

pages = "1525 -- 1530",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE",

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TY - JOUR

T1 - Moving Beyond p-Type mc-Si

T2 - Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

AU - Morishige, Ashley E.

AU - Heinz, Friedemann D.

AU - Laine, Hannu S.

AU - Schon, Jonas

AU - Kwapil, Wolfram

AU - Lai, Barry

AU - Savin, Hele

AU - Schubert, Martin C.

AU - Buonassisi, Tonio

N1 - | openaire: EC/FP7/307315/EU//SOLARX

PY - 2018

Y1 - 2018

N2 - N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.

AB - N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.

KW - Charge carrier lifetime

KW - Correlative microscopy

KW - Iron

KW - micro-photolumine-scence (μ-PL)

KW - micro-X-ray fluorescence (μ-XRF)

KW - n-type

KW - Photovoltaic cells

KW - Photovoltaic systems

KW - precipitate

KW - Silicon

KW - silicon

KW - synchrotron

UR - https://www.scopus.com/pages/publications/85053620118

U2 - 10.1109/JPHOTOV.2018.2869544

DO - 10.1109/JPHOTOV.2018.2869544

M3 - Article

AN - SCOPUS:85053620118

SN - 2156-3381

VL - 8

SP - 1525

EP - 1530

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

ER -

Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Abstract

UN SDGs

Keywords

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Riddle of light induced degradation in silicon photovoltaics

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Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Abstract

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Riddle of light induced degradation in silicon photovoltaics

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