Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Pyry Kivisaari*, Toufik Sadi, Jani Oksanen, Jukka Tulkki

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
16 Downloads (Pure)


Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

Original languageEnglish
Article number154
Pages (from-to)1-6
Number of pages6
JournalOptical and Quantum Electronics
Issue number2
Publication statusPublished - 1 Feb 2016
MoE publication typeA1 Journal article-refereed


  • Hot carriers
  • III–Nitride LEDs
  • Monte Carlo simulations
  • Non-equilibrium hole distribution


Dive into the research topics of 'Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs'. Together they form a unique fingerprint.

Cite this