Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Pyry Kivisaari; Toufik Sadi; Jani Oksanen; Jukka Tulkki

doi:10.1007/s11082-016-0406-4

Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Pyry Kivisaari^*, Toufik Sadi, Jani Oksanen, Jukka Tulkki

^*Corresponding author for this work

Department of Neuroscience and Biomedical Engineering

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5k_BT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

Original language	English
Article number	154
Pages (from-to)	1-6
Number of pages	6
Journal	Optical and Quantum Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1007/s11082-016-0406-4
Publication status	Published - 1 Feb 2016
MoE publication type	A1 Journal article-refereed

Keywords

Hot carriers
III–Nitride LEDs
Monte Carlo simulations
Non-equilibrium hole distribution

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10.1007/s11082-016-0406-4

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title = "Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs",

abstract = "Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.",

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AU - Oksanen, Jani

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N2 - Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

AB - Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

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Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

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Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

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