Monte Carlo simulation of hot electron transport in III-N LEDs

Pyry Kivisaari*, Toufik Sadi, Jani Oksanen, Jukka Tulkki

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.

    Original languageEnglish
    Title of host publicationProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
    Pages21-22
    Number of pages2
    ISBN (Electronic)9781479936823
    DOIs
    Publication statusPublished - 23 Oct 2014
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on Numerical Simulation of Optoelectronic Devices - Palma de Mallorca, Spain
    Duration: 1 Sep 20144 Sep 2014
    Conference number: 14

    Conference

    ConferenceInternational Conference on Numerical Simulation of Optoelectronic Devices
    Abbreviated titleNUSOD
    Country/TerritorySpain
    CityPalma de Mallorca
    Period01/09/201404/09/2014

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