Monte Carlo simulation of hot electron transport in III-N LEDs

Pyry Kivisaari; Toufik Sadi; Jani Oksanen; Jukka Tulkki

doi:10.1109/NUSOD.2014.6935336

Monte Carlo simulation of hot electron transport in III-N LEDs

Pyry Kivisaari^*, Toufik Sadi, Jani Oksanen, Jukka Tulkki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.

Original language	English
Title of host publication	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Publisher	IEEE
Pages	21-22
Number of pages	2
ISBN (Electronic)	9781479936823
DOIs	https://doi.org/10.1109/NUSOD.2014.6935336
Publication status	Published - 23 Oct 2014
MoE publication type	A4 Conference publication
Event	International Conference on Numerical Simulation of Optoelectronic Devices - Palma de Mallorca, Spain Duration: 1 Sept 2014 → 4 Sept 2014 Conference number: 14

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	Spain
City	Palma de Mallorca
Period	01/09/2014 → 04/09/2014

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10.1109/NUSOD.2014.6935336

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@inproceedings{ed1487ef910d44afa698524862f214f0,

title = "Monte Carlo simulation of hot electron transport in III-N LEDs",

abstract = "We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.",

author = "Pyry Kivisaari and Toufik Sadi and Jani Oksanen and Jukka Tulkki",

year = "2014",

month = oct,

day = "23",

doi = "10.1109/NUSOD.2014.6935336",

language = "English",

pages = "21--22",

booktitle = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",

publisher = "IEEE",

address = "United States",

note = "International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 01-09-2014 Through 04-09-2014",

}

Kivisaari, P, Sadi, T, Oksanen, J & Tulkki, J 2014, Monte Carlo simulation of hot electron transport in III-N LEDs. in Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD., 6935336, IEEE, pp. 21-22, International Conference on Numerical Simulation of Optoelectronic Devices, Palma de Mallorca, Spain, 01/09/2014. https://doi.org/10.1109/NUSOD.2014.6935336

Monte Carlo simulation of hot electron transport in III-N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Oksanen, Jani et al.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD. IEEE, 2014. p. 21-22 6935336.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Monte Carlo simulation of hot electron transport in III-N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Oksanen, Jani

AU - Tulkki, Jukka

N1 - Conference code: 14

PY - 2014/10/23

Y1 - 2014/10/23

N2 - We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.

AB - We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.

UR - http://www.scopus.com/inward/record.url?scp=84910050099&partnerID=8YFLogxK

U2 - 10.1109/NUSOD.2014.6935336

DO - 10.1109/NUSOD.2014.6935336

M3 - Conference article in proceedings

AN - SCOPUS:84910050099

SP - 21

EP - 22

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 1 September 2014 through 4 September 2014

ER -

Monte Carlo simulation of hot electron transport in III-N LEDs

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