Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy

Research output: Contribution to journalArticle

Researchers

  • P.J. McNally
  • J.W. Curley
  • M. Boldt
  • A. Reader
  • T. Tuomi
  • R. Rantamäki
  • A.N. Danilewsky
  • I. DeWolf

Research units

Details

Original languageEnglish
Pages (from-to)351-358
JournalJournal of Materials Science: Materials in Electronics
Volume10
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

    Research areas

  • CMOS, isolation, stress, synchrotron, x-ray topography

ID: 4980458