Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy

P.J. McNally, J.W. Curley, M. Boldt, A. Reader, T. Tuomi, R. Rantamäki, A.N. Danilewsky, I. DeWolf

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)351-358
    JournalJournal of Materials Science: Materials in Electronics
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed


    • CMOS
    • isolation
    • stress
    • synchrotron
    • x-ray topography

    Cite this