@article{be7a45c88acb43aba3c136d68aa9ec89,
title = "Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy",
keywords = "CMOS, isolation, stress, synchrotron, x-ray topography, CMOS, isolation, stress, synchrotron, x-ray topography, CMOS, isolation, stress, synchrotron, x-ray topography",
author = "P.J. McNally and J.W. Curley and M. Boldt and A. Reader and T. Tuomi and R. Rantam{\"a}ki and A.N. Danilewsky and I. DeWolf",
year = "1999",
language = "English",
volume = "10",
pages = "351--358",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
}