Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping

Research output: Contribution to journalArticleScientificpeer-review


  • E. Calleja
  • M.A. Sanchez-Garcia
  • F. Calle
  • F.B. Naranjo
  • E. Munoz
  • U. Jahn
  • K. Ploog
  • J. Sanchez
  • J.M. Calleja
  • K. Saarinen
  • P. Hautojärvi

Research units


Original languageEnglish
JournalMaterials Science & Engineering B
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaN, positron

ID: 3556359