Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping

  • E. Calleja
  • , M.A. Sanchez-Garcia
  • , F. Calle
  • , F.B. Naranjo
  • , E. Munoz
  • , U. Jahn
  • , K. Ploog
  • , J. Sanchez
  • , J.M. Calleja
  • , K. Saarinen
  • , P. Hautojärvi

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalMaterials Science and Engineering B: Advanced Functional Solid-State Materials
Volume82
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • GaN
  • positron

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