Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping

E. Calleja; M.A. Sanchez-Garcia; F. Calle; F.B. Naranjo; E. Munoz; U. Jahn; K. Ploog; J. Sanchez; J.M. Calleja; K. Saarinen; P. Hautojärvi

Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping

E. Calleja, M.A. Sanchez-Garcia, F. Calle, F.B. Naranjo, E. Munoz, U. Jahn, K. Ploog, J. Sanchez, J.M. Calleja, K. Saarinen, P. Hautojärvi

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Journal	Materials Science & Engineering B
Volume	82
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

Keywords

GaN
positron

Cite this

@article{a74e7ed7c75d4a529438c0bcfe5dfd0d,

title = "Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping",

keywords = "GaN, positron, GaN, positron, GaN, positron",

author = "E. Calleja and M.A. Sanchez-Garcia and F. Calle and F.B. Naranjo and E. Munoz and U. Jahn and K. Ploog and J. Sanchez and J.M. Calleja and K. Saarinen and P. Hautoj{\"a}rvi",

year = "2001",

language = "English",

volume = "82",

journal = "Materials Science & Engineering B",

issn = "0921-5107",

publisher = "Elsevier",

}

TY - JOUR

T1 - Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping

AU - Calleja, E.

AU - Sanchez-Garcia, M.A.

AU - Calle, F.

AU - Naranjo, F.B.

AU - Munoz, E.

AU - Jahn, U.

AU - Ploog, K.

AU - Sanchez, J.

AU - Calleja, J.M.

AU - Saarinen, K.

AU - Hautojärvi, P.

PY - 2001

Y1 - 2001

KW - GaN

KW - positron

KW - GaN

KW - positron

KW - GaN

KW - positron

M3 - Article

SN - 0921-5107

VL - 82

JO - Materials Science & Engineering B

JF - Materials Science & Engineering B

ER -