Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

M. Mattila; M. Sopanen; H. Lipsanen

doi:10.1063/1.1994021

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

M. Mattila^*
, M. Sopanen
, H. Lipsanen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.

Original language	English
Title of host publication	Physics of Semiconductors, Parts A and B
Editors	J Menendez, CG VanDeWalle
Publisher	American Institute of Physics
Pages	117-118
Number of pages	2
ISBN (Print)	0735402574
DOIs	https://doi.org/10.1063/1.1994021
Publication status	Published - 2005
MoE publication type	A4 Conference publication
Event	International Conference on the Physics of Semiconductors - Flagstaff, United States Duration: 26 Jul 2004 → 30 Jul 2004 Conference number: 27

Publication series

Name	AIP Conference Proceedings
Publisher	AIP
Volume	772
ISSN (Print)	0094-243X

Conference

Conference	International Conference on the Physics of Semiconductors
Abbreviated title	ICPS
Country/Territory	United States
City	Flagstaff
Period	26/07/2004 → 30/07/2004

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10.1063/1.1994021

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@inproceedings{fe0b92d48a31498d9617bc9dd653b21b,

title = "Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers",

abstract = "The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.",

author = "M. Mattila and M. Sopanen and H. Lipsanen",

year = "2005",

doi = "10.1063/1.1994021",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings ",

publisher = "American Institute of Physics",

pages = "117--118",

editor = "J Menendez and \{VanDeWalle \}, \{CG \}",

booktitle = "Physics of Semiconductors, Parts A and B",

address = "United States",

note = "International Conference on the Physics of Semiconductors , ICPS ; Conference date: 26-07-2004 Through 30-07-2004",

}

Mattila, M, Sopanen, M & Lipsanen, H 2005, Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers. in J Menendez & CG VanDeWalle (eds), Physics of Semiconductors, Parts A and B. AIP Conference Proceedings , vol. 772, American Institute of Physics, pp. 117-118, International Conference on the Physics of Semiconductors , Flagstaff, Arizona, United States, 26/07/2004. https://doi.org/10.1063/1.1994021

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers. / Mattila, M.; Sopanen, M.; Lipsanen, H.
Physics of Semiconductors, Parts A and B. ed. / J Menendez; CG VanDeWalle . American Institute of Physics, 2005. p. 117-118 (AIP Conference Proceedings ; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

AU - Mattila, M.

AU - Sopanen, M.

AU - Lipsanen, H.

N1 - Conference code: 27

PY - 2005

Y1 - 2005

N2 - The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.

AB - The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.

UR - https://www.scopus.com/pages/publications/33749469995

U2 - 10.1063/1.1994021

DO - 10.1063/1.1994021

M3 - Conference article in proceedings

AN - SCOPUS:33749469995

SN - 0735402574

T3 - AIP Conference Proceedings

SP - 117

EP - 118

BT - Physics of Semiconductors, Parts A and B

A2 - Menendez, J

A2 - VanDeWalle , CG

PB - American Institute of Physics

T2 - International Conference on the Physics of Semiconductors

Y2 - 26 July 2004 through 30 July 2004

ER -

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

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