Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.

Research output: Working paperProfessional

Standard

Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers. / Taskinen, M.; Heinämäki, A.; Lipsanen, H.; Tulkki, J.; Tuomi, T.

Jyväskylä, 1995. p. 7.

Research output: Working paperProfessional

Harvard

Taskinen, M, Heinämäki, A, Lipsanen, H, Tulkki, J & Tuomi, T 1995 'Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.' Jyväskylä, pp. 7.

APA

Taskinen, M., Heinämäki, A., Lipsanen, H., Tulkki, J., & Tuomi, T. (1995). Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers. (pp. 7). Jyväskylä.

Vancouver

Taskinen M, Heinämäki A, Lipsanen H, Tulkki J, Tuomi T. Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers. Jyväskylä. 1995, p. 7.

Author

Taskinen, M. ; Heinämäki, A. ; Lipsanen, H. ; Tulkki, J. ; Tuomi, T. / Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers. Jyväskylä, 1995. pp. 7

Bibtex - Download

@techreport{45a763b1e447407e99e4e1de8d55e49c,
title = "Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.",
keywords = "semiconductor lasers, metalorganic vapour phase epitaxy, semiconductor lasers, metalorganic vapour phase epitaxy, semiconductor lasers, metalorganic vapour phase epitaxy",
author = "M. Taskinen and A. Hein{\"a}m{\"a}ki and H. Lipsanen and J. Tulkki and T. Tuomi",
year = "1995",
language = "English",
pages = "7",
type = "WorkingPaper",

}

RIS - Download

TY - UNPB

T1 - Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.

AU - Taskinen, M.

AU - Heinämäki, A.

AU - Lipsanen, H.

AU - Tulkki, J.

AU - Tuomi, T.

PY - 1995

Y1 - 1995

KW - semiconductor lasers, metalorganic vapour phase epitaxy

KW - semiconductor lasers, metalorganic vapour phase epitaxy

KW - semiconductor lasers, metalorganic vapour phase epitaxy

M3 - Working paper

SP - 7

BT - Modelling, fabrication and xharacterisation of 1.43 my m InGaAsp/InP quantum-well lasers.

CY - Jyväskylä

ER -

ID: 5200240