Modeling phosphorus diffusion gettering of iron in single crystal silicon

Antti Haarahiltunen; Hele Savin; Marko Yli-Koski; Heli Talvitie; Juha Sinkkonen

Modeling phosphorus diffusion gettering of iron in single crystal silicon

Antti Haarahiltunen, Hele Savin, Marko Yli-Koski, Heli Talvitie, Juha Sinkkonen

Research output: Contribution to journal › Article › Scientific › peer-review

47 Citations (Scopus)

20 Downloads (Pure)

Original language	English
Pages (from-to)	4
Journal	Journal of Applied Physics
Volume	105
Issue number	2
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Keywords

gettering
iron
phosphorus
silicon

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savin_modeling_phosphorus_2009Final published version, 549 KB

Cite this

@article{98b81743fa9b40fa96e674ee5140ae6a,

title = "Modeling phosphorus diffusion gettering of iron in single crystal silicon",

keywords = "gettering, iron, phosphorus, silicon, gettering, iron, phosphorus, silicon, gettering, iron, phosphorus, silicon",

author = "Antti Haarahiltunen and Hele Savin and Marko Yli-Koski and Heli Talvitie and Juha Sinkkonen",

year = "2009",

language = "English",

volume = "105",

pages = "4",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Modeling phosphorus diffusion gettering of iron in single crystal silicon

AU - Haarahiltunen, Antti

AU - Savin, Hele

AU - Yli-Koski, Marko

AU - Talvitie, Heli

AU - Sinkkonen, Juha

PY - 2009

Y1 - 2009

KW - gettering

KW - iron

KW - phosphorus

KW - silicon

KW - gettering

KW - iron

KW - phosphorus

KW - silicon

KW - gettering

KW - iron

KW - phosphorus

KW - silicon

M3 - Article

VL - 105

SP - 4

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -