Modeling of Trapping and Abrupt Doping Effects in MESFETs Using R-Dynamic Element

J. Ladvanszky, M. Valtonen

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages13
    Publication statusPublished - 1994
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameCircuit Theory Laboratory Report Series
    PublisherHelsinki University of Technology, Circuit Theory Laboratory
    No.CT-21
    ISSN (Print)0784-5979

    Keywords

    • APLAC
    • memristor
    • MESFET
    • modeling
    • R-dynamic element
    • simulation
    • trapping effect

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