Modeling of charge and photon transport in coupled intracavity light emitters

Toufik Sadi*, Pyry Kivisaari, Jonna Tiira, Ivan Radevici, Tuomas Haggren, Jani Oksanen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

To enable a more detailed analysis of our recent studies of intracavity double diode structures (DDSs), new simulation tools are needed. Such simulation models must account for both charge and photon transport in the studied structures, consisting of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p-n-homojunction photodiode (PD) structure, enclosed within a single semiconductor cavity. We apply the drift-diffusion formalism for charge transport and an optical model coupling the LED and the PD, with the aim of complementing our experimental work on the efficiency of these devices to understand better their suitability for electroluminescence cooling [1], and shedding further light on electroluminescence and optical energy transfer in the structures.

Original languageEnglish
Title of host publication2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublisherIAPR; IEEE Computer Society
Pages201-202
Number of pages2
ISBN (Electronic)9781509053230
DOIs
Publication statusPublished - 11 Aug 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Numerical Simulation of Optoelectronic Devices - Copenhagen, Denmark
Duration: 24 Jul 201728 Jul 2017
Conference number: 17

Conference

ConferenceInternational Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD
CountryDenmark
CityCopenhagen
Period24/07/201728/07/2017

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