Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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Abstract

We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

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Original languageEnglish
Article number235201
Pages (from-to)1-6
Number of pages6
JournalPhysical Review B
Volume88
Issue number23
Publication statusPublished - 5 Dec 2013
MoE publication typeA1 Journal article-refereed

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