Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Ville Virkkala; Ville Havu; Filip Tuomisto; Martti J. Puska

doi:10.1103/PhysRevB.88.235201

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Ville Virkkala^*
, Ville Havu
, Filip Tuomisto
, Martti J. Puska

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

22 Citations (Scopus)

262 Downloads (Pure)

Abstract

We suggested recently that the band-gap narrowing in dilute GaAs _1-xN_x alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

Original language	English
Article number	235201
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B
Volume	88
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.88.235201
Publication status	Published - 5 Dec 2013
MoE publication type	A1 Journal article-refereed

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title = "Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys",

abstract = "We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the {\^a}{\OE}",

author = "Ville Virkkala and Ville Havu and Filip Tuomisto and Puska, \{Martti J.\}",

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AU - Puska, Martti J.

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N2 - We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

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DO - 10.1103/PhysRevB.88.235201

M3 - Article

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Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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