Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Ville Virkkala; Ville Havu; Filip Tuomisto; Martti J. Puska

doi:10.1103/PhysRevB.88.235201

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Ville Virkkala^*, Ville Havu, Filip Tuomisto, Martti J. Puska

^*Corresponding author for this work

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

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233 Downloads (Pure)

Abstract

We suggested recently that the band-gap narrowing in dilute GaAs _1-xN_x alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

Original language	English
Article number	235201
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B
Volume	88
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.88.235201
Publication status	Published - 5 Dec 2013
MoE publication type	A1 Journal article-refereed

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@article{3886d98e79974b7cbaa353ad45cc5332,

title = "Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys",

abstract = "We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the {\^a}{\OE}",

author = "Ville Virkkala and Ville Havu and Filip Tuomisto and Puska, {Martti J.}",

year = "2013",

month = dec,

day = "5",

doi = "10.1103/PhysRevB.88.235201",

language = "English",

volume = "88",

pages = "1--6",

journal = "Physical Review B",

issn = "1098-0121",

publisher = "American Physical Society",

number = "23",

}

TY - JOUR

T1 - Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

AU - Virkkala, Ville

AU - Havu, Ville

AU - Tuomisto, Filip

AU - Puska, Martti J.

PY - 2013/12/5

Y1 - 2013/12/5

N2 - We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

AB - We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

UR - http://www.scopus.com/inward/record.url?scp=84890640452&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.88.235201

DO - 10.1103/PhysRevB.88.235201

M3 - Article

AN - SCOPUS:84890640452

SN - 1098-0121

VL - 88

SP - 1

EP - 6

JO - Physical Review B

JF - Physical Review B

IS - 23

M1 - 235201

ER -

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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