MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations. / Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O; Shirazi, R; Lipsanen, Harri; Sopanen, Markku; Kardynal, B E.

16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011. 2011. p. Tu3-25.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Svensk, O, Suihkonen, S, Sintonen, S, Kopylov, O, Shirazi, R, Lipsanen, H, Sopanen, M & Kardynal, BE 2011, MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations. in 16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011. pp. Tu3-25.

APA

Svensk, O., Suihkonen, S., Sintonen, S., Kopylov, O., Shirazi, R., Lipsanen, H., ... Kardynal, B. E. (2011). MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations. In 16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011 (pp. Tu3-25)

Vancouver

Svensk O, Suihkonen S, Sintonen S, Kopylov O, Shirazi R, Lipsanen H et al. MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations. In 16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011. 2011. p. Tu3-25

Author

Svensk, Olli ; Suihkonen, Sami ; Sintonen, Sakari ; Kopylov, O ; Shirazi, R ; Lipsanen, Harri ; Sopanen, Markku ; Kardynal, B E. / MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations. 16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011. 2011. pp. Tu3-25

Bibtex - Download

@inproceedings{57ad12050518416ebd4375fffa64cc72,
title = "MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations",
author = "Olli Svensk and Sami Suihkonen and Sakari Sintonen and O Kopylov and R Shirazi and Harri Lipsanen and Markku Sopanen and Kardynal, {B E}",
year = "2011",
language = "English",
pages = "Tu3--25",
booktitle = "16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kes{\"a}kuuta 2011",

}

RIS - Download

TY - GEN

T1 - MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations

AU - Svensk, Olli

AU - Suihkonen, Sami

AU - Sintonen, Sakari

AU - Kopylov, O

AU - Shirazi, R

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Kardynal, B E

PY - 2011

Y1 - 2011

M3 - Conference contribution

SP - Tu3-25

BT - 16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011

ER -

ID: 608368