MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Original languageEnglish
Title of host publication16th Semiconducting and Insulating Materials Conference (SIMC-XVI); KTH, Tukholma,Ruotsi; 19.-23. Kesäkuuta 2011
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication

ID: 608368