MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations,

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Technical University of Denmark

Details

Original languageEnglish
Pages (from-to)1667-1669
Number of pages3
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume9
Issue number7
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

ID: 742241