MOCVD Al(Ga)N Insulator for Alternative Silicon-On-Insulator Structure

Glenn Ross, Ville Luntinen, Mikael Broas, Sami Suihkonen, Turkka Tuomi, Aapo Lankinen, Andreas Danilewsky, Markku Tilli, Mervi Paulasto-Kröckel

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Due to the functional limitations of SiO2 for SOI applications, alternative dielectric materials have been investigated. Alternative SOI materials in this work include, AlN and AlGaN. The dielectrics were deposited using MOCVD, and with the aid of PECVD deposited SiO2, and the SiO2 was directly bonded to a handle Si wafer. Tensile tests were performed on the samples to examine the fracture behavior and maximum tensile stresses, with results being comparable to a traditional SOI. Characterization was undertaken using TEM to understand the microstructural and interfacial properties of alternative SOI. High crystal quality Al(Ga)N was achieved on a Si(111) substrate that generally contained well defined chemical interfaces. Finally, synchrotron X-ray diffraction topography was used to understand the topographical strain profile of the device and handle wafers. Topography results showed different strain network properties between the device and handle wafer. This work has demonstrated preliminary feasibility of using alternative dielectrics for SOI applications.
Original languageEnglish
Title of host publicationProceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020
Number of pages6
ISBN (Electronic)9781728162928
Publication statusPublished - 15 Sep 2020
MoE publication typeA4 Article in a conference publication
EventElectronics System-Integration Technology Conference - Virtual conference, Tonsberg, Vestfold, Norway
Duration: 15 Sep 202018 Sep 2020
Conference number: 8


ConferenceElectronics System-Integration Technology Conference
Abbreviated titleESTC
CityTonsberg, Vestfold
OtherVirtual conference


  • Silicon-on-insulator
  • Dielectric
  • Metalorganic chemical vapor deposition
  • Direct bonding
  • Aluminum nitride
  • Aluminum gallium nitride
  • Tensile tests
  • Transmission electron microscopy
  • Synchrotron x-ray diffraction topography

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