Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism

C. Medina-Bailon, T. Sadi, M. Nedjalkov, H. Carrillo-Nunez, J. Lee, O. Badami, V. Georgiev, S. Selberherr, A. Asenov

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

We have studied the impact of the cross-sectional shape on the electron mobility of n-type silicon nanowire transistors (NWTs). We have considered circular and elliptical cross-section NWTs including the most relevant multisubband scattering processes involving phonon, surface roughness, and impurity scattering. For this purpose, we use a flexible simulation framework, coupling 3D Poisson and 2D Schrödinger solvers with the semi-classical Kubo-Greenwood formalism. Moreover, we consider cross-section dependent effective masses calculated from tight binding simulations. Our results show significant mobility improvement in the elliptic NWTs in comparison to the circular one for both 100 and 110 transport directions.

Original languageEnglish
Pages (from-to)1571-1574
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number10
Early online date1 Jan 2019
DOIs
Publication statusPublished - 9 Aug 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • Effective mass
  • Electron mobility
  • Kubo-Greenwood Formalism
  • Nanowire Field-Effect Transistors
  • One-Dimensional Multi-Subband Scattering Models
  • Phonons
  • Quantum Confinement
  • Scattering
  • Shape
  • Silicon
  • Transistors
  • Transport Effective Mass

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    Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carrillo-Nunez, H., Lee, J., Badami, O., ... Asenov, A. (2019). Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism. IEEE Electron Device Letters, 40(10), 1571-1574. https://doi.org/10.1109/LED.2019.2934349