The ion-beam mixing mechanism has been studied for the case where an easily evaporated heavy element is mixed by implanting light ions into the bulk material. Here Sn was mixed by implanting 400-keV N+ 2 into Al, Ti, and steel. The implantations were performed using both low- and high-intensity beams and with different doses. The samples were heated during and after implantation. Mixing of the bulk material with Sn occurred in the high-intensity implantation. On the contrary, the low-intensity implantations had no discernible ion-mixing effect. Annealing measurements carried out after the implantations demonstrated that the N implantation retards diffusion of Sn into the bulk material and that the nitrogen sites have no tendency to trap diffusing Sn atoms.