Mixed Aluminum Precursor in the Atomic Layer Deposited Al2O3 for Effective Silicon Emitter Passivation

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

In this contribution, we have studied the impact of
aluminum precursor of atomic layer deposited (ALD) Al2O3 on
the passivation quality of silicon solar cell emitters. Aluminum
precursors, Trimethylaluminum (TMA) and Dimethylaluminum
chloride (DMACl), and their different combinations were used to
deposit Al2O3 layers on both phosphorus and boron implanted
emitters. In addition to measuring the passivation quality, the
wafers experienced thermal stability investigation. In all wafers,
Al2O3 resulted in better emitter saturation current as compared
to thermal oxide resulting from ion implantation drive-in anneal.
On industrial type of emitters, values around Joe at 60 fA/cm2
were obtained. The impact of aluminium source was not as high
as expected, however, we found that aluminium precursor has a
high impact on the formation of so-called blisters. We show that
the blisters can be greatly suppressed using DMACl as the
aluminium precursor while TMA results in the formation of high-
density and large-size blisters. Our PERC solar cell with the
DMACl in the ALD process showed similar passivation quality as
the TMA-based process.
Original languageEnglish
Title of host publication2016 43rd IEEE Photovoltaic Specialists Conference, Portland, USA June 5-10, 2016
PublisherIEEE
Pages2859-2862
Number of pages4
ISBN (Electronic)978-1-5090-2724-8
DOIs
Publication statusPublished - Sep 2016
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Portland, United States
Duration: 5 Jun 201610 Jun 2016
Conference number: 43

Publication series

NameIEEE Photovoltaic Specialists Conference
PublisherIEEE
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
CountryUnited States
CityPortland
Period05/06/201610/06/2016

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  • Cite this

    Bao, Y., Huang, H., Lv, J., & Savin, H. (2016). Mixed Aluminum Precursor in the Atomic Layer Deposited Al2O3 for Effective Silicon Emitter Passivation. In 2016 43rd IEEE Photovoltaic Specialists Conference, Portland, USA June 5-10, 2016 (pp. 2859-2862). [7750176] (IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC.2016.7750176