Abstract
In this contribution, we have studied the impact of
aluminum precursor of atomic layer deposited (ALD) Al2O3 on
the passivation quality of silicon solar cell emitters. Aluminum
precursors, Trimethylaluminum (TMA) and Dimethylaluminum
chloride (DMACl), and their different combinations were used to
deposit Al2O3 layers on both phosphorus and boron implanted
emitters. In addition to measuring the passivation quality, the
wafers experienced thermal stability investigation. In all wafers,
Al2O3 resulted in better emitter saturation current as compared
to thermal oxide resulting from ion implantation drive-in anneal.
On industrial type of emitters, values around Joe at 60 fA/cm2
were obtained. The impact of aluminium source was not as high
as expected, however, we found that aluminium precursor has a
high impact on the formation of so-called blisters. We show that
the blisters can be greatly suppressed using DMACl as the
aluminium precursor while TMA results in the formation of high-
density and large-size blisters. Our PERC solar cell with the
DMACl in the ALD process showed similar passivation quality as
the TMA-based process.
aluminum precursor of atomic layer deposited (ALD) Al2O3 on
the passivation quality of silicon solar cell emitters. Aluminum
precursors, Trimethylaluminum (TMA) and Dimethylaluminum
chloride (DMACl), and their different combinations were used to
deposit Al2O3 layers on both phosphorus and boron implanted
emitters. In addition to measuring the passivation quality, the
wafers experienced thermal stability investigation. In all wafers,
Al2O3 resulted in better emitter saturation current as compared
to thermal oxide resulting from ion implantation drive-in anneal.
On industrial type of emitters, values around Joe at 60 fA/cm2
were obtained. The impact of aluminium source was not as high
as expected, however, we found that aluminium precursor has a
high impact on the formation of so-called blisters. We show that
the blisters can be greatly suppressed using DMACl as the
aluminium precursor while TMA results in the formation of high-
density and large-size blisters. Our PERC solar cell with the
DMACl in the ALD process showed similar passivation quality as
the TMA-based process.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 43rd IEEE Photovoltaic Specialists Conference |
| Publisher | IEEE |
| Pages | 2859-2862 |
| Number of pages | 4 |
| ISBN (Electronic) | 978-1-5090-2724-8 |
| DOIs | |
| Publication status | Published - Sept 2016 |
| MoE publication type | A4 Conference publication |
| Event | IEEE Photovoltaic Specialists Conference - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 Conference number: 43 |
Conference
| Conference | IEEE Photovoltaic Specialists Conference |
|---|---|
| Abbreviated title | PVSC |
| Country/Territory | United States |
| City | Portland |
| Period | 05/06/2016 → 10/06/2016 |