Misfit dislocations in GaAsN-GaAs interface

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Research units


Original languageEnglish
Title of host publicationThe 4th International Conf. Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo Finland, 10-12 June, 2002
Publication statusPublished - 2002
MoE publication typeA4 Article in a conference publication

    Research areas

  • semiconductors, synchrotron x-ray topography

ID: 4141416