Misfit dislocations in GaAsN/GaAs interface

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Misfit dislocations in GaAsN/GaAs interface. / Toivonen, Juha; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; McNally, P.J; Chen, W.; Lowney, D.

In: Journal of Materials Science: Materials in Electronics, Vol. 14, No. 5, 05.2003, p. 267-270.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Toivonen, J, Tuomi, T, Riikonen, J, Knuuttila, L, Hakkarainen, T, Sopanen, M, Lipsanen, H, McNally, PJ, Chen, W & Lowney, D 2003, 'Misfit dislocations in GaAsN/GaAs interface' Journal of Materials Science: Materials in Electronics, vol. 14, no. 5, pp. 267-270. https://doi.org/10.1023/A:1023999106469

APA

Toivonen, J., Tuomi, T., Riikonen, J., Knuuttila, L., Hakkarainen, T., Sopanen, M., ... Lowney, D. (2003). Misfit dislocations in GaAsN/GaAs interface. Journal of Materials Science: Materials in Electronics, 14(5), 267-270. https://doi.org/10.1023/A:1023999106469

Vancouver

Author

Toivonen, Juha ; Tuomi, Turkka ; Riikonen, Juha ; Knuuttila, Lauri ; Hakkarainen, Teppo ; Sopanen, Markku ; Lipsanen, Harri ; McNally, P.J ; Chen, W. ; Lowney, D. / Misfit dislocations in GaAsN/GaAs interface. In: Journal of Materials Science: Materials in Electronics. 2003 ; Vol. 14, No. 5. pp. 267-270.

Bibtex - Download

@article{4874ee7c02b5455cacefce8038d4f473,
title = "Misfit dislocations in GaAsN/GaAs interface",
keywords = "dislocations, GaAsN, synchrotron x-ray topography, dislocations, GaAsN, synchrotron x-ray topography, dislocations, GaAsN, synchrotron x-ray topography",
author = "Juha Toivonen and Turkka Tuomi and Juha Riikonen and Lauri Knuuttila and Teppo Hakkarainen and Markku Sopanen and Harri Lipsanen and P.J McNally and W. Chen and D. Lowney",
year = "2003",
month = "5",
doi = "10.1023/A:1023999106469",
language = "English",
volume = "14",
pages = "267--270",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "5",

}

RIS - Download

TY - JOUR

T1 - Misfit dislocations in GaAsN/GaAs interface

AU - Toivonen, Juha

AU - Tuomi, Turkka

AU - Riikonen, Juha

AU - Knuuttila, Lauri

AU - Hakkarainen, Teppo

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - McNally, P.J

AU - Chen, W.

AU - Lowney, D.

PY - 2003/5

Y1 - 2003/5

KW - dislocations

KW - GaAsN

KW - synchrotron x-ray topography

KW - dislocations

KW - GaAsN

KW - synchrotron x-ray topography

KW - dislocations

KW - GaAsN

KW - synchrotron x-ray topography

U2 - 10.1023/A:1023999106469

DO - 10.1023/A:1023999106469

M3 - Article

VL - 14

SP - 267

EP - 270

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 5

ER -

ID: 4149766