Misfit dislocations in GaAsN/GaAs interface

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of Turku
  • Dublin City University

Details

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number5
Publication statusPublished - May 2003
MoE publication typeA1 Journal article-refereed

    Research areas

  • dislocations, GaAsN, synchrotron x-ray topography

ID: 4149766