Misfit dislocations in GaAsN-GaAs interface

J. Toivonen, T. Tuomi, J. Riikonen, L. Knuuttila, T. Hakkarainen, M. Sopanen, H. Lipsanen, P.J. McNally, W. Chen, D. Lowney

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationThe 4th International Conf. Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo Finland, 10-12 June, 2002
    Pages21-24
    Publication statusPublished - 2002
    MoE publication typeA4 Article in a conference publication

    Keywords

    • semiconductors
    • synchrotron x-ray topography

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