Minimum-Energy Point Design in FDSOI Regular-V-t

Lauri Koskinen*, Markus Hiienkari, Matthew Turnquist, Philippe Flatresse

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V-T option of FDSOI should be used.

    Original languageEnglish
    Title of host publication2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)
    PublisherIEEE
    Number of pages2
    ISBN (Print)978-1-5090-0259-7
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA4 Article in a conference publication
    EventIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - Rohnert Park, Canada
    Duration: 5 Oct 20158 Oct 2015

    Conference

    ConferenceIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    Abbreviated titleS3S
    CountryCanada
    CityRohnert Park
    Period05/10/201508/10/2015

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