Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Haibin Sun, Xiaolong Liu, Li Zhao, Jianxin Jia, Changhui Jiang, Jiamin Xiao, Yuwei Chen, Long Xu, Zhiyong Duan, Peng Rao, Shengli Sun

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Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3–16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M–LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M–LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.
Original languageEnglish
Pages (from-to)1808-1817
Number of pages10
JournalOptics Express
Issue number2
Publication statusPublished - 17 Jan 2022
MoE publication typeA1 Journal article-refereed


  • Femtosecond lasers
  • Laser beams
  • Laser irradiation
  • Optical absorption
  • Scanning electron microscopy
  • Solar cells


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