Microstructural and electrical properties of gadolinium doped ceria thin films prepared by atomic layer deposition (ALD)

E. Gourba; A Ringuedé; M. Cassir; J. Päiväsaari; J. Niinistö; M. Putkonen; Lauri Niinistö

Microstructural and electrical properties of gadolinium doped ceria thin films prepared by atomic layer deposition (ALD)

E. Gourba, A Ringuedé, M. Cassir, J. Päiväsaari, J. Niinistö, M. Putkonen, Lauri Niinistö

Research output: Working paper › Professional

Original language	English
Pages	267-274
Publication status	Published - 2003
MoE publication type	D4 Published development or research report or study

Publication series

Name	5th International Conference on f-elements ICFE'5, Geneva, Switzerland, August 24-29, 2003

Keywords

atomic layer deposition
electrolyte for SOFC
gadolinium doped ceria
solid oxide fuel cells

Cite this

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title = "Microstructural and electrical properties of gadolinium doped ceria thin films prepared by atomic layer deposition (ALD)",

keywords = "atomic layer deposition, electrolyte for SOFC, gadolinium doped ceria, solid oxide fuel cells, atomic layer deposition, electrolyte for SOFC, gadolinium doped ceria, solid oxide fuel cells, atomic layer deposition, electrolyte for SOFC, gadolinium doped ceria, solid oxide fuel cells",

author = "E. Gourba and A Ringued{\'e} and M. Cassir and J. P{\"a}iv{\"a}saari and J. Niinist{\"o} and M. Putkonen and Lauri Niinist{\"o}",

year = "2003",

language = "English",

series = "5th International Conference on f-elements ICFE'5, Geneva, Switzerland, August 24-29, 2003",

pages = "267--274",

type = "WorkingPaper",

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Microstructural and electrical properties of gadolinium doped ceria thin films prepared by atomic layer deposition (ALD). / Gourba, E.; Ringuedé, A; Cassir, M.; Päiväsaari, J.; Niinistö, J.; Putkonen, M.; Niinistö, Lauri.

2003. p. 267-274 (5th International Conference on f-elements ICFE'5, Geneva, Switzerland, August 24-29, 2003).

Research output: Working paper › Professional

TY - UNPB

T1 - Microstructural and electrical properties of gadolinium doped ceria thin films prepared by atomic layer deposition (ALD)

AU - Gourba, E.

AU - Ringuedé, A

AU - Cassir, M.

AU - Päiväsaari, J.

AU - Niinistö, J.

AU - Putkonen, M.

AU - Niinistö, Lauri

PY - 2003

Y1 - 2003

KW - atomic layer deposition

KW - electrolyte for SOFC

KW - gadolinium doped ceria

KW - solid oxide fuel cells

KW - atomic layer deposition

KW - electrolyte for SOFC

KW - gadolinium doped ceria

KW - solid oxide fuel cells

KW - atomic layer deposition

KW - electrolyte for SOFC

KW - gadolinium doped ceria

KW - solid oxide fuel cells

M3 - Working paper

T3 - 5th International Conference on f-elements ICFE'5, Geneva, Switzerland, August 24-29, 2003

SP - 267

EP - 274

BT - Microstructural and electrical properties of gadolinium doped ceria thin films prepared by atomic layer deposition (ALD)

ER -