Microscopic structure of the DX center in Si-doped AlxGa1-xAs: observation of a vacancy by positron annihilation spectroscopy

J. Mäkinen, T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, V.M. Airaksinen, J. Nagle

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)
Original languageEnglish
JournalPhysical Review B
Volume52
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Keywords

  • AlxGa1-xAs
  • DX center
  • positron

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