Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

J. Gebauer; M. Lausmann; T.E.M. Staab; R. Krause-Rehberg; M. Hakala; M.J. Puska

doi:10.1103/PhysRevB.60.1464

Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

J. Gebauer
, M. Lausmann
, T.E.M. Staab
, R. Krause-Rehberg
, M. Hakala
, M.J. Puska

Department of Applied Physics

Martin Luther University Halle-Wittenberg

Research output: Contribution to journal › Article › Scientific › peer-review

33 Citations (Scopus)

215 Downloads (Pure)

Abstract

Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

Original language	English
Pages (from-to)	1464-1467
Number of pages	4
Journal	Physical Review B
Volume	60
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.60.1464
Publication status	Published - 15 Jul 1999
MoE publication type	A1 Journal article-refereed

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abstract = "Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.",

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AU - Gebauer, J.

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AU - Staab, T.E.M.

AU - Krause-Rehberg, R.

AU - Hakala, M.

AU - Puska, M.J.

PY - 1999/7/15

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N2 - Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

AB - Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

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Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

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