Metastable antisite pair in GaAs

S. Pöykkö*, M. J. Puska, R. M. Nieminen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review


Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.

Original languageEnglish
Pages (from-to)969-974
Number of pages6
JournalMaterials Science Forum
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed


  • Antisite defects
  • Gallium arsenide
  • Metastability


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