Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.
|Number of pages||6|
|Journal||Materials Science Forum|
|Publication status||Published - 1997|
|MoE publication type||A1 Journal article-refereed|
- Antisite defects
- Gallium arsenide