Abstract
Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 969-974 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 258-263 |
| Publication status | Published - 1997 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- Antisite defects
- Gallium arsenide
- Metastability