Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

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Abstract

The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be ΔAB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.
Original languageEnglish
Article number093101
JournalApplied Physics Letters
Volume116
Issue number9
DOIs
Publication statusPublished - 2 Mar 2020
MoE publication typeA1 Journal article-refereed

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