Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Guillaume von Gastrow; Eric Calle; Pablo Ortega; Ramon Alcubilla; Andreana  Daniil; Elias Z. Stutz; Anna Fontcuberta i Morral; Sebastian Husein; Tara Nietzold; Mariana Bertoni; Hele Savin

doi:10.1109/PVSC.2017.8366010

Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Guillaume von Gastrow, Eric Calle, Pablo Ortega, Ramon Alcubilla, Andreana Daniil, Elias Z. Stutz, Anna Fontcuberta i Morral, Sebastian Husein, Tara Nietzold, Mariana Bertoni, Hele Savin

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Abstract

We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)
Publisher	IEEE
Pages	944-947
Number of pages	4
ISBN (Electronic)	978-1-5090-5605-7
DOIs	https://doi.org/10.1109/PVSC.2017.8366010
Publication status	Published - 2018
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialists Conference - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 Conference number: 44

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	PVSC
Country/Territory	United States
City	Washington
Period	25/06/2017 → 30/06/2017

Keywords

black silicon
contact resistance
emitter
doping

Access to Document

10.1109/PVSC.2017.8366010

vonGastrow_et_al_bSi_metallization_IEEE_PVSC_2017Accepted author manuscript, 369 KB

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Cite this

@inproceedings{d691a7be71cb4d0fbfd43b4efa89f73b,

title = "Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells",

abstract = "We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.",

keywords = "black silicon, contact resistance, emitter, doping",

author = "{von Gastrow}, Guillaume and Eric Calle and Pablo Ortega and Ramon Alcubilla and Andreana Daniil and Stutz, {Elias Z.} and {Fontcuberta i Morral}, Anna and Sebastian Husein and Tara Nietzold and Mariana Bertoni and Hele Savin",

year = "2018",

doi = "10.1109/PVSC.2017.8366010",

language = "English",

pages = "944--947",

booktitle = "2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)",

publisher = "IEEE",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 25-06-2017 Through 30-06-2017",

}

von Gastrow, G, Calle, E, Ortega, P, Alcubilla, R, Daniil, A, Stutz, EZ, Fontcuberta i Morral, A, Husein, S, Nietzold, T, Bertoni, M & Savin, H 2018, Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells. in 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) . IEEE, pp. 944-947, IEEE Photovoltaic Specialists Conference, Washington, District of Columbia, United States, 25/06/2017. https://doi.org/10.1109/PVSC.2017.8366010

TY - GEN

T1 - Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

AU - von Gastrow, Guillaume

AU - Calle, Eric

AU - Ortega, Pablo

AU - Alcubilla, Ramon

AU - Daniil, Andreana

AU - Stutz, Elias Z.

AU - Fontcuberta i Morral, Anna

AU - Husein, Sebastian

AU - Nietzold, Tara

AU - Bertoni, Mariana

AU - Savin, Hele

N1 - Conference code: 44

PY - 2018

Y1 - 2018

N2 - We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.

AB - We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.

KW - black silicon

KW - contact resistance

KW - emitter

KW - doping

U2 - 10.1109/PVSC.2017.8366010

DO - 10.1109/PVSC.2017.8366010

M3 - Conference article in proceedings

SP - 944

EP - 947

BT - 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 25 June 2017 through 30 June 2017

ER -

Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Abstract

Conference

Keywords

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