Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Guillaume von Gastrow, Eric Calle, Pablo Ortega, Ramon Alcubilla, Andreana Daniil, Elias Z. Stutz, Anna Fontcuberta i Morral, Sebastian Husein, Tara Nietzold, Mariana Bertoni, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.
Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)
Number of pages4
ISBN (Electronic)978-1-5090-5605-7
Publication statusPublished - 2018
MoE publication typeA4 Conference publication
EventIEEE Photovoltaic Specialists Conference - Washington, United States
Duration: 25 Jun 201730 Jun 2017
Conference number: 44


ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
Country/TerritoryUnited States


  • black silicon
  • contact resistance
  • emitter
  • doping


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