Metal contacts on InN: Proposal for Schottky contact

V.T. Rangel-Kuoppa, S. Suihkonen, M. Sopanen, H. Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    Several metal contacts (Au, Ag, Pt, Pd, Cu, Ni, Ge, Ti, Cr, and Al) were tested on Metalorganic vapour phase epitaxy (MOVPE)-grown InN. Current-voltage (I-V) measurements were carried out. Most of the metals showed ohmic behavior. Pt and Ge yielded some Schottky contact behavior, but were very unstable. Al formed a stable rectifying contact after thermal annealing over 500°C. Several annealing temperatures and times were studied. The rectifying behavior is explained in terms of N atoms reacting with In and Al to form a layer of AlInN, which has a larger band gap than InN. 10.1143/JJAP.45.36 ©2006 The Japan Society of Applied Physics.

    Original languageEnglish
    Pages (from-to)36-39
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume45
    Issue number1A
    DOIs
    Publication statusPublished - 10 Jan 2006
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Annealing
    • InN
    • Metal contact
    • Ohmic behavior
    • Rectifying behavior
    • Schottky contact

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