Mechanistic investigation of ZnO nanowire growth

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Mechanistic investigation of ZnO nanowire growth. / Rackauskas, Simas; Nasibulin, Albert G.; Jiang, Hua; Tian, Ying; Statkute, Gintare; Shandakov, Sergey D.; Lipsanen, Harri; Kauppinen, Esko I.

In: Applied Physics Letters, Vol. 95, No. 18, 183114, 2009, p. 1-3.

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Rackauskas, Simas ; Nasibulin, Albert G. ; Jiang, Hua ; Tian, Ying ; Statkute, Gintare ; Shandakov, Sergey D. ; Lipsanen, Harri ; Kauppinen, Esko I. / Mechanistic investigation of ZnO nanowire growth. In: Applied Physics Letters. 2009 ; Vol. 95, No. 18. pp. 1-3.

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@article{9d0128dea9234e5a8024a5cd9139ebcd,
title = "Mechanistic investigation of ZnO nanowire growth",
abstract = "ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.",
keywords = "diffusion, grain boundaries, II-VI semiconductors, interstitials, nanotechnology, nanowires, photoluminescence, vacancies (crystal), wide band gap semiconductors, zinc compounds,, diffusion, grain boundaries, II-VI semiconductors, interstitials, nanotechnology, nanowires, photoluminescence, vacancies (crystal), wide band gap semiconductors, zinc compounds,, diffusion, grain boundaries, II-VI semiconductors, interstitials, nanotechnology, nanowires, photoluminescence, vacancies (crystal), wide band gap semiconductors, zinc compounds,",
author = "Simas Rackauskas and Nasibulin, {Albert G.} and Hua Jiang and Ying Tian and Gintare Statkute and Shandakov, {Sergey D.} and Harri Lipsanen and Kauppinen, {Esko I.}",
year = "2009",
doi = "10.1063/1.3258074",
language = "English",
volume = "95",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "18",

}

RIS - Download

TY - JOUR

T1 - Mechanistic investigation of ZnO nanowire growth

AU - Rackauskas, Simas

AU - Nasibulin, Albert G.

AU - Jiang, Hua

AU - Tian, Ying

AU - Statkute, Gintare

AU - Shandakov, Sergey D.

AU - Lipsanen, Harri

AU - Kauppinen, Esko I.

PY - 2009

Y1 - 2009

N2 - ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

AB - ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

KW - diffusion

KW - grain boundaries

KW - II-VI semiconductors

KW - interstitials

KW - nanotechnology

KW - nanowires

KW - photoluminescence

KW - vacancies (crystal)

KW - wide band gap semiconductors

KW - zinc compounds,

KW - diffusion

KW - grain boundaries

KW - II-VI semiconductors

KW - interstitials

KW - nanotechnology

KW - nanowires

KW - photoluminescence

KW - vacancies (crystal)

KW - wide band gap semiconductors

KW - zinc compounds,

KW - diffusion

KW - grain boundaries

KW - II-VI semiconductors

KW - interstitials

KW - nanotechnology

KW - nanowires

KW - photoluminescence

KW - vacancies (crystal)

KW - wide band gap semiconductors

KW - zinc compounds,

U2 - 10.1063/1.3258074

DO - 10.1063/1.3258074

M3 - Article

VL - 95

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 183114

ER -

ID: 3449618