Mechanistic investigation of ZnO nanowire growth

Simas Rackauskas; Albert G. Nasibulin; Hua Jiang; Ying Tian; Gintare Statkute; Sergey D. Shandakov; Harri Lipsanen; Esko I. Kauppinen

doi:10.1063/1.3258074

Mechanistic investigation of ZnO nanowire growth

Simas Rackauskas, Albert G. Nasibulin, Hua Jiang, Ying Tian, Gintare Statkute, Sergey D. Shandakov, Harri Lipsanen, Esko I. Kauppinen

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Abstract

ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

Original language	English
Article number	183114
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	18
DOIs	https://doi.org/10.1063/1.3258074
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Keywords

diffusion
grain boundaries
II-VI semiconductors
interstitials
nanotechnology
nanowires
photoluminescence
vacancies (crystal)
wide band gap semiconductors
zinc compounds,

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title = "Mechanistic investigation of ZnO nanowire growth",

abstract = "ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.",

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author = "Simas Rackauskas and Nasibulin, {Albert G.} and Hua Jiang and Ying Tian and Gintare Statkute and Shandakov, {Sergey D.} and Harri Lipsanen and Kauppinen, {Esko I.}",

year = "2009",

doi = "10.1063/1.3258074",

language = "English",

volume = "95",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Mechanistic investigation of ZnO nanowire growth

AU - Rackauskas, Simas

AU - Nasibulin, Albert G.

AU - Jiang, Hua

AU - Tian, Ying

AU - Statkute, Gintare

AU - Shandakov, Sergey D.

AU - Lipsanen, Harri

AU - Kauppinen, Esko I.

PY - 2009

Y1 - 2009

N2 - ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

AB - ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

KW - diffusion

KW - grain boundaries

KW - II-VI semiconductors

KW - interstitials

KW - nanotechnology

KW - nanowires

KW - photoluminescence

KW - vacancies (crystal)

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KW - zinc compounds,

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KW - grain boundaries

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KW - interstitials

KW - nanotechnology

KW - nanowires

KW - photoluminescence

KW - vacancies (crystal)

KW - wide band gap semiconductors

KW - zinc compounds,

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KW - grain boundaries

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KW - interstitials

KW - nanotechnology

KW - nanowires

KW - photoluminescence

KW - vacancies (crystal)

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DO - 10.1063/1.3258074

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VL - 95

SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

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Mechanistic investigation of ZnO nanowire growth

Abstract

Keywords

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