Mechanism of diffusion and dissociation of E-center in silicon

M. Ganchenkova, V. Borodin, R.M. Nieminen

Research output: Contribution to journal › Article › Scientific › peer-review

Cite this

@article{036987affc534d99ae3a654daea29cdb,

title = "Mechanism of diffusion and dissociation of E-center in silicon",

author = "M. Ganchenkova and V. Borodin and R.M. Nieminen",

year = "2005",

language = "English",

volume = "237-240",

pages = "1129",

journal = "Defect and Diffusion Forum",

issn = "1662-9507",

publisher = "Trans Tech Publications",

}