Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

Research output: Contribution to journalArticle

Researchers

Research units

  • Technische Universität München
  • Ludwig-Maximilians-University
  • VTT Technical Research Centre of Finland

Abstract

We report on low temperatures (4 K) in situ nanomanipulation of the confining potential of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered optical fiber tip over the self organized InP stressor islands that are responsible for the localized strain field in the GaInAs/GaAs quantum well. By scanning the tip with a shear force contact of the order of 1 nN, we thinned down the InP stressor islands in an unexpectedly reproducible and controlled way. The modification of the confining potential was directly monitored by measuring in situ the photoluminescence of each manipulated dot using a near-field scanning optical microscope.

Details

Original languageEnglish
Pages (from-to)358-360
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number3
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

    Research areas

  • nanomanipulation, quantum dot, semiconductor

ID: 4976546